? 2000 ixys all rights reserved 1 - 4 igbt modules short circuit soa capability square rbsoa mii 145-12 a3 mid 145-12 a3 mdi 145-12 a3 symbol conditions maximum ratings v ces t j = 25 c to 150 c 1200 v v cgr t j = 25 c to 150 c; r ge = 20 k 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c 160 a i c80 t c = 80 c 110 a i cm t c = 80 c, t p = 1 ms 220 a t sc v ge = 15 v, v ce = v ces , t j = 125 c10 s (scsoa) r g = 6.8 , non repetitive rbsoa v ge = 15 v, t j = 125 c, r g = 6.8 i cm = 200 a clamped inductive load, l = 100 hv cek < v ces p tot t c = 25 c 700 w t j 150 c t stg -40 ... +150 c v isol 50/60 hz, rms t = 1 min 4000 v~ i isol 1 ma t = 1 s 4800 v~ insulating material: al 2 o 3 m d mounting torque (module) 2.25-2.75 nm 20-25 lb.in. (teminals) 2.5-3.7 nm 22-33 lb.in. d s creepage distance on surface 12.7 mm d a strike distance through air 9.6 mm a max. allowable acceleration 50 m/s 2 weight typical 130 g 4.6 oz. data according to a single igbt/fred unless otherwise stated. 5 4 6 7 2 3 1 mii 2 3 1 5 4 mid 2 3 1 6 7 mdi 7 6 3 2 1 4 5 e 72873 features npt igbt technology low saturation voltage low switching losses switching frequency up to 30 khz square rbsoa, no latch up high short circuit capability positive temperature coefficient for easy parallelling mos input, voltage controlled ultra fast free wheeling diodes package with dcb ceramic base plate isolation voltage 4800 v ul registered e72873 advantages space and weight savings reduced protection circuits typical applications ac and dc motor control ac servo and robot drives power supplies welding inverters i c25 = 160 a v ces = 1200 v v ce(sat) typ. = 2.2 v 030
? 2000 ixys all rights reserved 2 - 4 mii 145-12 a3 mid 145-12 a3 mdi 145-12 a3 symbol conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v (br)ces v ge = 0 v 1200 v v ge(th) i c = 4 ma, v ce = v ge 4.5 6.5 v i ces v ce = v ces t j = 25 c6ma t j = 125 c9ma i ges v ce = 0 v, v ge = 20 v 400 na v ce(sat) i c = 100 a, v ge = 15 v 2.2 2.7 v c ies 6.5 nf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 1 nf c res 0.5 nf t d(on) 100 ns t r 60 ns t d(off) 600 ns t f 90 ns e on 16 mj e off 15 mj r thjc 0.18 k/w r thjs with heatsink compound 0.36 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v f i f = 100 a, v ge = 0 v, 2.4 2.6 v i f = 100 a, v ge = 0 v, t j = 125 c 1.9 2.0 v i f t c = 25 c 150 a t c = 80 c95a i rm i f = 100 a, v ge = 0 v, -di f /dt = 600 a/ s62a t rr t j = 125 c, v r = 600 v 200 ns r thjc 0.45 k/w r thjs with heatsink compound 0.9 k/w inductive load, t j = 125 c i c = 100 a, v ge = 15 v v ce = 600 v, r g = 6.8 dimensions in mm (1 mm = 0.0394")
? 2000 ixys all rights reserved 3 - 4 0 200 400 600 800 1000 0 40 80 120 0 100 200 300 01234 0 50 100 150 200 250 300 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 50 100 150 200 250 0 100 200 300 400 500 0 5 10 15 20 0.00.51.01.52.02.53.03.5 0 50 100 150 200 250 13v 11v t j = 25c v ge =17v t j = 125c v ce = 600v i c = 100a 15v 567891011 0 50 100 150 200 250 13v 11v v ge =17v 15v v ce = 20v t j = 25c 9v 9v v ce v a i c v ce a i c v v v v ge v f a i c a i f nc q g -di/dt v v ge a i rm t rr ns a/ m s 145-12 t j = 125c v r = 600v i f = 100a t j = 25c t j = 125c i rm t rr fig. 1 typ. output characteristics fig. 2 typ. output characteristics fig. 3 typ. transfer characteristics fig. 4 typ. forward characteristics of free wheeling diode fig. 5 typ. turn on gate charge fig. 6 typ. turn off characteristics of free wheeling diode mii 145-12 a3 mid 145-12 a3 mdi 145-12 a3
? 2000 ixys all rights reserved 4 - 4 fig. 7 typ. turn on energy and switching fig. 8 typ. turn off energy and switching times versus collector current times versus collector current fig. 9 typ. turn on energy and switching fig.10 typ. turn off energy and switching times versus gate resistor times versus gate resistor fig. 11 reverse biased safe operating area fig. 12 typ. transient thermal impedance rbsoa 0 50 100 150 200 0 10 20 30 40 0 30 60 90 120 0 50 100 150 200 0 10 20 30 40 0 200 400 600 800 0.00001 0.0001 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 0 8 16 24 32 40 48 56 0 5 10 15 20 25 0 300 600 900 1200 1500 0 8 16 24 32 40 48 56 0 10 20 30 40 50 0 60 120 180 240 300 single pulse v ce = 600v v ge = 15v r g = 6.8 w t j = 125 c 145-12 v ce = 600v v ge = 15v i c = 100a t j = 125 c 0 200 400 600 800 1000 1200 0 40 80 120 160 200 240 r g = 6.8 w t j = 125 c v cek < v ces v ce = 600v v ge = 15v r g = 6.8 w t j = 125 c e on v ce = 600v v ge = 15v i c = 100a t j = 125 c t d(on) t r e off t d(off) t f e on t d(on) t r e off t d(off) t f i c a i c a mj e off mj e on ns t ns t r g w r g w v ce t s mj e on mj e off ns t ns t i cm k/w z thjc igbt diode v a mii 145-12 a3 mid 145-12 a3 mdi 145-12 a3
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